High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates
| Autor: | Rémi Comyn, Yvon Cordier, Cédric Masante, Idriss Abid, Riad Kabouche, Farid Medjdoub, Catherine Bougerol, Julien Pernot |
|---|---|
| Přispěvatelé: | Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Nanophysique et Semiconducteurs (NEEL - NPSC), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Semi-conducteurs à large bande interdite (NEEL - SC2G), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), ANR-17-CE05-0013,BREAkuP,Matériaux à ultra large bande interdite pour les futurs applications d'électronique de puissance(2017), Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520 (IEMN), Ecole Centrale de Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Nanophysique et Semiconducteurs [2007-2015] (NPSC [2007-2015]), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS), Semi-conducteurs à large bande interdite (SC2G ), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015 - 2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015 - 2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Nanophysique et Semiconducteurs (NPSC), Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ) |
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Band gap lcsh:Mechanical engineering and machinery 02 engineering and technology 7. Clean energy 01 natural sciences Article law.invention GaN law 0103 physical sciences Breakdown voltage lcsh:TJ1-1570 Electrical and Electronic Engineering ComputingMilieux_MISCELLANEOUS 010302 applied physics ultra-wide band gap high-electron-mobility transistor (HEMT) business.industry Mechanical Engineering Direct current Transistor High voltage Heterojunction 021001 nanoscience & nanotechnology Control and Systems Engineering Sapphire [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] Optoelectronics 0210 nano-technology business Molecular beam epitaxy |
| Zdroj: | Micromachines Micromachines, 2019, 10 (10), pp.690. ⟨10.3390/mi10100690⟩ Micromachines, Vol 10, Iss 10, p 690 (2019) Micromachines, MDPI, 2019, 10 (10), pp.690. ⟨10.3390/mi10100690⟩ Volume 10 Issue 10 |
| ISSN: | 2072-666X |
| DOI: | 10.3390/mi10100690⟩ |
| Popis: | In this paper, we present the fabrication and Direct Current/high voltage characterizations of AlN-based thin and thick channel AlGaN/GaN heterostructures that are regrown by molecular beam epitaxy on AlN/sapphire. A very high lateral breakdown voltage above 10 kV was observed on the thin channel structure for large contact distances. Also, the buffer assessment revealed a remarkable breakdown field of 5 MV/cm for short contact distances, which is far beyond the theoretical limit of the GaN-based material system. The potential interest of the thin channel configuration in AlN-based high electron mobility transistors is confirmed by the much lower breakdown field that is obtained on the thick channel structure. Furthermore, fabricated transistors are fully functional on both structures with low leakage current, low on-resistance, and reduced temperature dependence as measured up to 300 ° C. This is attributed to the ultra-wide bandgap AlN buffer, which is extremely promising for high power, high temperature future applications. |
| Databáze: | OpenAIRE |
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