Near infrared absorption of Si nanoparticles embedded in silica films
| Autor: | L. Siozade, S. Fisson, Bruno Gallas, I. Stenger, J. Rivory, G. Vuye |
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| Přispěvatelé: | Institut des Nanosciences de Paris (INSP), Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2007 |
| Předmět: |
Materials science
Absorption spectroscopy Extended X-ray absorption fine structure interface states Analytical chemistry Dangling bond silicon Surfaces and Interfaces photon absorption spectroscopy Condensed Matter Physics Molecular physics Nanostructures Surfaces Coatings and Films Absorption band Ellipsometry Attenuation coefficient Materials Chemistry [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] Absorption (electromagnetic radiation) Spectroscopy |
| Zdroj: | Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2007, 601 (14), pp.2912-2916. ⟨10.1016/j.susc.2007.04.244⟩ |
| ISSN: | 0039-6028 1879-2758 |
| DOI: | 10.1016/j.susc.2007.04.244 |
| Popis: | International audience; The absorption coefficient of Si nanoparticles embedded in a silica matrix obtained through thermal annealing at 1000 degrees C of SiO thin films has been determined by a combination of ellipsometry and photothermal deflection spectroscopy. The high absorption level below 2 eV was explained by the superposition of the contribution of: (i) extended states and distorted bond states (Urbach tail), giving rise to an exponential regime of the variation of the absorption coefficient on energy and (ii) point defect states. The value of the characteristic energy of the exponential regime was found above 200 mcV. This high value was partly related to the high stress present at the np-Si/SiO2 interface. The point defects were attributed to dangling bonds and induced an additional absorption band located near 1.2 eV contributing to above 100 cm(-1) to the absorption at this energy. (C) 2007 Elsevier B.V. All rights reserved. |
| Databáze: | OpenAIRE |
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