InGaP/GaAs hole barrier asymmetry determined by (002) X-ray reflections and p-type DB-RTD hole transport
| Autor: | Werner Prost, M. Agethen, G. Janßen, Franz-Josef Tegude, P. Velling |
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| Rok vydání: | 1998 |
| Předmět: |
Diffraction
business.industry Chemistry Superlattice media_common.quotation_subject Resonant-tunneling diode Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Asymmetry Inorganic Chemistry Condensed Matter::Materials Science Optics Reflection (mathematics) Materials Chemistry Optoelectronics Metalorganic vapour phase epitaxy Thin film business Elektrotechnik media_common |
| Zdroj: | Journal of Crystal Growth. 195:117-123 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/s0022-0248(98)00712-x |
| Popis: | InGaP/GaAs heterostructures are grown by LP-MOVPE. The InGaP layer embedded in GaAs and both the upper and the lower interface are characterized by high resolution X-ray diffraction (HR-XRD) using the (0 0 2) reflection, which is quasi forbidden for GaAs. Thin and center-symmetric InGaP–GaAs–InGaP structures embedded in GaAs result in fringes which can be described using kinematical theory. This way both a thickness and composition analysis of InGaP layers is analytically obtained. Under optimized growth conditions the GaAs-to-InGaP interface is atomically abrupt while a 1 ML InGaAs interfacial layer is determined at the InGaP-to-GaAs interface. This asymmetry results in different hole-barrier functionality which is proven by low temperature I – V -characterization of p-type double barrier resonant tunneling diode (DB-RTD). |
| Databáze: | OpenAIRE |
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