A New Fast and Rugged 100 V Power MOSFET

Autor: Andreas Schlögl, Jan Ropohl, Ralf Siemieniec, Uli Hiller, Maximilian Rösch, N. Soufi-Amlashi, Franz Hirler
Rok vydání: 2006
Předmět:
Zdroj: 2006 12th International Power Electronics and Motion Control Conference.
Popis: A new, rugged 100 V power MOSFET of the OptiMOS?2-family is described. By applying compensation principles, a device technology was developed that combines low on-state resistance R ON with outstanding switching properties. The technology also offers a small gate charge Q G and a small gate resistance R G . In addition, the internal body diode, when acting as freewheeling diode, reveals a soft reverse-recovery with a small reverse-recovery charge Q RR . Therefore, the technology is particularly suitable for a variety of applications, including highly efficient DC-DC and AC-DC converters, telecommunication and server topologies, Class-D amplifiers, and motor control.
Databáze: OpenAIRE