Performance of conversion efficiency of a crystalline silicon solar cell with base doping density
| Autor: | Mehmet Hakkı Alma, Gökhan Şahin, F.I. Barro, Moustapha Sane, Genber Kerimli |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
inorganic chemicals
Materials science General Physics and Astronomy 02 engineering and technology 01 natural sciences law.invention law Condensed Matter::Superconductivity 0103 physical sciences Solar cell Crystalline silicon 010302 applied physics Equivalent series resistance business.industry Open-circuit voltage Doping Energy conversion efficiency technology industry and agriculture 021001 nanoscience & nanotechnology lcsh:QC1-999 Solar cell efficiency Optoelectronics 0210 nano-technology business Short circuit human activities lcsh:Physics |
| Zdroj: | Results in Physics, Vol 7, Iss, Pp 4264-4268 (2017) |
| ISSN: | 2211-3797 |
| Popis: | In this study, we investigate theoretically the electrical parameters of a crystalline silicon solar cell in steady state. Based on a one-dimensional modeling of the cell, the short circuit current density, the open circuit voltage, the shunt and series resistances and the conversion efficiency are calculated, taking into account the base doping density. Either the I-V characteristic, series resistance, shunt resistance and conversion efficiency are determined and studied versus base doping density. The effects applied of base doping density on these parameters have been studied. The aim of this work is to show how short circuit current density, open circuit voltage and parasitic resistances are related to the base doping density and to exhibit the role played by those parasitic resistances on the conversion efficiency of the crystalline silicon solar. Keywords: Crystalline silicon solar cell, Base doping density, Series resistance, Shunt resistance, Conversion efficiency |
| Databáze: | OpenAIRE |
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