Growth Mechanism of Self-Catalyzed Group III−V Nanowires
| Autor: | Anders Mikkelsen, Anil W. Dey, Knut Deppert, Emelie Hilner, Julian Stangl, Günther Bauer, Karla Hillerich, Bernhard Mandl, Lars Samuelson, Alexei Zakharov |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
Letter
Materials science nanowire nucleation mechanism nanowire growth mechanism Silicon Macromolecular Substances Surface Properties Molecular Conformation Nanowire Nucleation chemistry.chemical_element Bioengineering Nanotechnology 02 engineering and technology Calcium nitride Epitaxy 01 natural sciences Catalysis chemistry.chemical_compound Impurity Materials Testing 0103 physical sciences General Materials Science Particle Size Spectroscopy 010302 applied physics Mechanical Engineering General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Nanostructures surface imaging and spectroscopy chemistry Crystallization 0210 nano-technology |
| Zdroj: | Nano Letters |
| ISSN: | 1530-6992 1530-6984 |
| Popis: | Group III−V nanowires offer the exciting possibility of epitaxial growth on a wide variety of substrates, most importantly silicon. To ensure compatibility with Si technology, catalyst-free growth schemes are of particular relevance, to avoid impurities from the catalysts. While this type of growth is well-documented and some aspects are described, no detailed understanding of the nucleation and the growth mechanism has been developed. By combining a series of growth experiments using metal−organic vapor phase epitaxy, as well as detailed in situ surface imaging and spectroscopy, we gain deeper insight into nucleation and growth of self-seeded III−V nanowires. By this mechanism most work available in literature concerning this field can be described. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|