Supercurrent in Graphene Josephson Junctions with Narrow Trenches in the Quantum Hall Regime
| Autor: | Yash Mehta, Hengming Li, Takashi Taniguchi, Tate Fleming, Andrew Seredinski, Gleb Finkelstein, Ming-Tso Wei, Francois Amet, Chung-Ting Ke, Ethan Mancil, Seigo Tarucha, Ivan Borzenets, Anne Draelos, Michihisa Yamamoto, Kenji Watanabe |
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| Rok vydání: | 2018 |
| Předmět: |
Josephson effect
Materials science FOS: Physical sciences 02 engineering and technology Electron Quantum Hall effect 01 natural sciences law.invention law Hall effect Condensed Matter::Superconductivity 0103 physical sciences Mesoscale and Nanoscale Physics (cond-mat.mes-hall) General Materials Science 010306 general physics Superconductivity Condensed matter physics Condensed Matter - Mesoscale and Nanoscale Physics Graphene Mechanical Engineering Supercurrent 021001 nanoscience & nanotechnology Condensed Matter Physics Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Mechanics of Materials Trench 0210 nano-technology |
| DOI: | 10.48550/arxiv.1807.11923 |
| Popis: | Coupling superconductors to quantum Hall edge states is the subject of intense investigation as part of the ongoing search for non-abelian excitations. Our group has previously observed supercurrents of hundreds of picoamperes in graphene Josephson junctions in the quantum Hall regime. One of the explanations of this phenomenon involves the coupling of an electron edge state on one side of the junction to a hole edge state on the opposite side. In our previous samples, these states are separated by several microns. Here, a narrow trench perpendicular to the contacts creates counterpropagating quantum Hall edge channels tens of nanometres from each other. Transport measurements demonstrate a change in the low-field Fraunhofer interference pattern for trench devices and show a supercurrent in both trench and reference junctions in the quantum Hall regime. The trench junctions show no enhancement of quantum Hall supercurrent and an unexpected supercurrent periodicity with applied field, suggesting the need for further optimization of device parameters. Comment: 9 pages, 5 figures |
| Databáze: | OpenAIRE |
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