Integrated CMOS-compatible Q-switched mode-locked lasers at 1900nm with an on-chip artificial saturable absorber
| Autor: | Shtyrkova, Katia, Callahan, Patrick T., Li, Nanxi, Magden, Emir Salih, Ruocco, Alfonso, Vermeulen, Diedrik, Kärtner, Franz X., Watts, Michael R., Ippen, Erich P. |
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| Jazyk: | angličtina |
| Rok vydání: | 2019 |
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| Zdroj: | Optics express 27(3), 3542-3556 (2019). doi:10.1364/OE.27.003542 |
| Popis: | Optics express 27(3), 3542 - 3556 (2019). doi:10.1364/OE.27.003542 We present a CMOS-compatible, Q-switched mode-locked integrated laser operating at 1.9 µm with a compact footprint of 23.6 × 0.6 × 0.78mm. The Q-switching rate is 720 kHz, the mode-locking rate is 1.2 GHz, and the optical bandwidth is 17nm, which is sufficient to support pulses as short as 215 fs. The laser is fabricated using a silicon nitride on silicon dioxide 300-mm wafer platform, with thulium-doped Al$_2$O$_3$ glass as a gain material deposited over the silicon photonics chip. An integrated Kerr-nonlinearity-based artificial saturable absorber is implemented in silicon nitride. A broadband (over 100 nm) dispersion-compensating grating in silicon nitride provides sufficient anomalous dispersion to compensate for the normal dispersion of the other laser components, enabling femtosecond-level pulses. The laser has no off-chip components with the exception of the optical pump, allowing for easy co-integration of numerous other photonic devices such as supercontinuum generation and frequency doublers which together potentially enable fully on-chip frequency comb generation. Published by OSA - The Optical Society, Washington, DC |
| Databáze: | OpenAIRE |
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