Topology and Photoelectric Properties of Heterostructure p-GaTe – n-InSe
| Autor: | Z.R. Kudrynskyi, O. S. Litvin, V. M. Katerynchuk, B. V. Kushnir, I.G. Tkachuk, Z.D. Kovalyuk |
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| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
Range (particle radiation)
Materials science business.industry Van der Waals surface Heterojunction Photoelectric effect Condensed Matter Physics lcsh:QC1-999 symbols.namesake Dielectric layer Band diagram symbols Optoelectronics General Materials Science Physical and Theoretical Chemistry business Thin oxide Topology (chemistry) lcsh:Physics |
| Zdroj: | Фізика і хімія твердого тіла, Vol 17, Iss 4, Pp 507-510 (2017) |
| ISSN: | 2309-8589 1729-4428 |
| Popis: | We investigated the photoelectrical properties of the heterojunctions p-GaTe – n-InSe fabricated by the method of mechanical contact of GaTe oxidized plate with van der Waals surface of InSe. The AFM-images revealed that there was formed thin oxide dielectric layer of Ga2O3 on the heterointerface p-GaTe – n-InSe. The energy band diagram was constructed. It was established that the p-GaTe – n-InSe heterojunction is photosensitive in the spectral range 0.74 - 1.0 µm. Key words: InSe, GaTe, layered crystals, heterojunction, AFM-images spectral characteristics. |
| Databáze: | OpenAIRE |
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