| Zdroj: |
He, J, Sangwongwanich, A, Yang, Y, Zhang, K & Iannuzzo, F 2022, ' Design for Reliability of SiC-MOSFET-Based 1500-V PV Inverters With Variable Gate Resistance ', I E E E Transactions on Industry Applications, vol. 58, no. 5, pp. 6485-6495 . https://doi.org/10.1109/TIA.2022.3183029 |
| Popis: |
1500-V photovoltaic (PV) configuration is the standard design in the solar PV industry. Extending the maximum dc voltage from 1000 to 1500 V can reduce the installation cost of the entire power plant. However, it may affect the reliability of the corresponding 1500-V PV inverters, due to the increased loading stresses, i.e., voltage stress and thermal loading of power devices. In this context, this article proposes a solution to the reliability enhancement of silicon carbide-mosfet-based 1500-V PV inverters with variable gate resistance. This solution offers a possibility to adaptively adjust the switching speed to make a compromise between the switching power loss and voltage overshoot during commutation, thus enhancing the reliability. The evaluation results based on the mission profile of a 125-kW 1500-V PV system installed in Denmark indicate that the PV inverter with the proposed design, i.e., variable gate resistance, can improve reliability performance compared to the fixed gate resistance solution while ensuring a safer operating voltage margin. |
