Study of the electrical behavior in Intermediate Band-Si junctions

Autor: R. García-Hernansanz, Javier Olea, Ignacio Mártil, A. del Prado, David Pastor, E. García-Hemme, L. González-Pariente, Germán González-Díaz
Rok vydání: 2013
Předmět:
Zdroj: Symposium E/H – Photovoltaic Technologies, Devices and Systems Based on Inorganic Materials, Small Organic Molecules and Hybrids | Symposium E/H – Photovoltaic Technologies, Devices and Systems Based on Inorganic Materials, Small Organic Molecules and Hybrids | 25/11/2012-30/11/2012 | Boston (MA), EEUU
Archivo Digital UPM
instname
ISSN: 1946-4274
0272-9172
DOI: 10.1557/opl.2013.224
Popis: In this study we analyze the electrical behavior of a junction formed by an ultraheavily Ti implanted Si layer processed by a Pulsed Laser Melting (PLM) and the non implanted Si substrate. This electrical behavior exhibits an electrical decoupling effect in this bilayer that we have associated to an Intermediate Band (IB) formation in the Ti supersaturated Si layer. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) measurements show a Ti depth profile with concentrations well above the theoretical limit required to the IB formation. Sheet resistance and Hall mobility measurements in the van der Pauw configuration of these bilayers exhibit a clear dependence with the different measurement currents introduced (1µA-1mA). We find that the electrical transport properties measured present an electrical decoupling effect in the bilayer as function of the temperature. The dependence of this effect with the injected current could be explained in terms of an additional current flow in the junction from the substrate to the IB layer and in terms of the voltage dependence in the junction with the measurement current.
Databáze: OpenAIRE
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