| Autor: |
Chunshuang Chu, Chao Fan, Hua Shao, Muyao Zhang, Zi-Hui Zhang, Ziqiang Zhao, Kangkai Tian, Yonghui Zhang, Gai Zhang |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
Optics express. 29(19) |
| ISSN: |
1094-4087 |
| Popis: |
It is known that light extraction efficiency (LEE) for AlGaN-based deep ultraviolet light-emitting didoes (DUV LEDs) can be enhanced by using truncated cone arrays with inclined sidewalls. In this work, the air-cavity-shaped inclined sidewall is applied and the p-GaN layer at the top of the truncated cone is laterally over-etched so that more light escape paths are generated for AlGaN-based DUV LEDs. The experimental results manifest that when compared with DUV LEDs only having the air-cavity-shaped inclined sidewall, the optical power for the DUV LEDs with laterally over-etched p-GaN at the top of the truncated cone is enhanced by 30% without sacrificing the forward bias. It is because the over-etched p-GaN makes little effect on the carrier injection and does not affect the ohmic contact resistance. Moreover, the simulation results show that the truncated cone with laterally over-etched p-GaN layer can enhance the LEE because the reduced p-GaN area can suppress the optical absorption and supplies additional light paths for DUV photos. Then, more light will be reflected into escape cones at the sapphire side. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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