Thermo-mechanical analysis of GaAs devices under temperature-humidity-bias testing
| Autor: | Frédéric Courtade, Kokou Adokanou, Barbara Bonnet, Karim Inal, Pierre Montmitonnet |
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| Přispěvatelé: | Centre de Mise en Forme des Matériaux (CEMEF), MINES ParisTech - École nationale supérieure des mines de Paris, Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS), Centre National d'Études Spatiales [Toulouse] (CNES), Thales Alenia Space - TAS (Toulouse, France), Thales (France) |
| Rok vydání: | 2015 |
| Předmět: | |
| Zdroj: | Proceedings EuroSimE 2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems-EuroSimE 2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems-EuroSimE 2015, Apr 2015, Budapest, Hungary. 8 p.-ISBN 978-1-4799-9949-1 ⟨10.1109/EuroSimE.2015.7103140⟩ |
| Popis: | International audience; Accelerated life tests on microelectronic devices are needed to estimate their degradation under severe environment. THB (Temperature Humidity Bias) [1] at 85°C and 85%RH (relative humidity) is commonly used for reliability studies. Empirical acceleration laws, used for THB test take into account the temperature change (from 22°C to 85°C), but they do not quantify its impact of the corresponding thermo-elastic stress which it adds to the residual stress in the die and of possible microstructure changes. The aim of this work is to determine the thermo-mechanical stresses induced in the active layer of a Gallium Arsenide (GaAs) chip by the THB test. They are due to the mismatch in Coefficients of Thermal Expansion (CTE) between the stack of thin film materials used as metallurgic interconnection and the intermediate dielectric layers above the active area of the chip. To estimate this stress, fist layers thicknesses measurement have been made with various techniques; second few configurations have been used to simulate heating and finally " complete " 2D Finite Element Analysis (FEA) has been performed. Elastic and thermo-physical materials data come from the literature. The results indicate compression of metal gate (Ti/Al/Au) and tensile stress concentration in the SiNx passivation layer. The outcomes is compared with THB test results from [2] and suggests that stress induced by heating must be considered to explain failure during THB test. |
| Databáze: | OpenAIRE |
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