Flattening and manipulation of the electronic structure of h-BN/Rh(111) nanomesh upon Sn intercalation
| Autor: | Kiyohisa Tanaka, Yuya Sugiyama, Thomas Greber, Toru Hirahara, Carlo Bernard, Yuma Okuyama, S. Ideta |
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| Přispěvatelé: | University of Zurich, Hirahara, Toru |
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
3104 Condensed Matter Physics
Materials science Reflection high-energy electron diffraction 530 Physics Photoemission spectroscopy Intercalation (chemistry) Angle-resolved photoemission spectroscopy 10192 Physics Institute 02 engineering and technology Electronic structure Coatings and Films chemistry.chemical_compound Lattice constant Materials Chemistry 2505 Materials Chemistry 2508 Surfaces Coatings and Films 3110 Surfaces and Interfaces Surfaces and Interfaces 021001 nanoscience & nanotechnology Condensed Matter Physics Surfaces Coatings and Films Surfaces Crystallography Nanomesh Electron diffraction chemistry 0210 nano-technology |
| Zdroj: | Surface Science. 672:33-38 |
| Popis: | We have deposited Sn on corrugated hexagonal boron nitride (h-BN) nanomeshs formed on Rh(111) and found that Sn atoms are intercalated between h-BN and Rh, flattening the h-BN. Our reflection high-energy electron diffraction (RHEED) analysis showed that the average in-plane lattice constant of h-BN increases due to the loss of the corrugation. Furthermore, electronic structure measurements based on angle-resolved photoemission spectroscopy (ARPES) showed that the h-BN π band width increases significantly while the σ band width does not change as much. These behaviors were partly different from previous reports on the intercalation of h-BN/Rh system. Our results offer a novel, simple method to control the electronic structure of h-BN. |
| Databáze: | OpenAIRE |
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