Charge collection in M-S-M cadmium telluride detectors
| Autor: | L. V. Maslova, S.M. Ryvkin, A.T. Akobirova, O. A. Matveev, A.Kh. Khusainov |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 1977 |
| Předmět: |
semiconductor counters
cadmium compounds Materials science charge collection band bending Analytical chemistry 02 engineering and technology 01 natural sciences photovoltaic effects photovoltage 0103 physical sciences 010306 general physics metal semiconductor metal structures business.industry Detector dark current resolution Charge (physics) 021001 nanoscience & nanotechnology Cadmium telluride photovoltaics Semiconductor detector electric field Band bending II VI semiconductors [PHYS.HIST]Physics [physics]/Physics archives I V characteristics Optoelectronics 0210 nano-technology business Dark current |
| Zdroj: | Revue de Physique Appliquée Revue de Physique Appliquée, Société française de physique / EDP, 1977, 12 (2), pp.331-334. ⟨10.1051/rphysap:01977001202033100⟩ |
| ISSN: | 0035-1687 2777-3671 |
| DOI: | 10.1051/rphysap:01977001202033100⟩ |
| Popis: | The metal-semiconductor-metal (MSM) structure often used for cadmium telluride radiation detectors has been studied for etched and mechanically polished material. The band bending at the interfaces has been determined by looking at the spectral dependence of the photo-voltage and the I-V characteristics. An analysis of the electric field for a MSM, CdTe device shows that slower charge collection and, hence, poorer resolution than expected for a p-i-n detector, is obtained. Also the dark current is at best determined only by the resistivity of the material rather than by a barrier. |
| Databáze: | OpenAIRE |
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