Surface doping of Ga In1−As semiconductor crystals with magnesium
| Autor: | Pekka Laukkanen, Johnny Dahl, Kalevi Kokko, Jari Lyytikäinen, Marjukka Tuominen, Antti Tukiainen, Muhammad Yasir, Jaakko Mäkelä, Juha-Pekka Lehtiö, Mircea Guina, Mikhail Kuzmin, Ville Polojärvi, Z. S. Jahanshah Rad, D. Koiva, Marko Patrick John Punkkinen |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
X-ray absorption spectroscopy Materials science ta114 Annealing (metallurgy) business.industry Doping Analytical chemistry 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences law.invention Condensed Matter::Materials Science Responsivity Semiconductor Electron diffraction law Condensed Matter::Superconductivity 0103 physical sciences General Materials Science Scanning tunneling microscope 0210 nano-technology Spectroscopy business |
| Zdroj: | Materialia. 2:33-36 |
| ISSN: | 2589-1529 |
| DOI: | 10.1016/j.mtla.2018.05.008 |
| Popis: | Effects of magnesium (Mg) alloying of GaxIn1−xAs(100) semiconductor surfaces have been investigated by low-energy electron diffraction, scanning tunneling microscopy/spectroscopy, and responsivity analysis of an infrared-detector component. In particular, the formation of an unusual Mg-induced (2 × 1) structure on GaAs(100) surfaces is found when depositing 1–3 monolayers of Mg on a cleaned GaAs(100) surface followed by annealing the sample in vacuum conditions at up to 500 °C. Concomitantly, the spectroscopy data show that the Fermi-level shifts toward valence band at the surface, indicating p-type doping of a surface part of GaAs due to Mg incorporation into the semiconductor. This surface-doping effect is also present in a test GaxIn1−xAs infrared detector, leading to increase in the detector responsivity. This beneficial effect of Mg-induced p-type doping is explained by a band-bending induced transfer of electrons away from a defect-rich top interface. |
| Databáze: | OpenAIRE |
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