Semiconducting amorphous Y-Ba-Cu-O: an attractive material for fast and sensitive thermal sensing in the NIR to THz range

Autor: Vishal S. Jagtap, Alain J. Kreisler, Xavier Galiano, Annick F. Dégardin
Přispěvatelé: Laboratoire Génie électrique et électronique de Paris (GeePs), CentraleSupélec-Sorbonne Université (SU)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Bergische Universität Wuppertal
Jazyk: angličtina
Rok vydání: 2020
Předmět:
Materials science
Silicon
chemistry.chemical_element
02 engineering and technology
Dielectric
01 natural sciences
7. Clean energy
[SPI.MAT]Engineering Sciences [physics]/Materials
010309 optics
020210 optoelectronics & photonics
0103 physical sciences
0202 electrical engineering
electronic engineering
information engineering

Figure of merit
Thin film
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Noise-equivalent power
ComputingMilieux_MISCELLANEOUS
business.industry
Pyroelectricity
Amorphous solid
[SPI.TRON]Engineering Sciences [physics]/Electronics
[SPI.ELEC]Engineering Sciences [physics]/Electromagnetism
chemistry
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic
Optoelectronics
Dielectric loss
business
Zdroj: SPIE Proceedings
SPIE Photonics West 2020
SPIE Photonics West 2020, Feb 2020, San Francisco, United States. pp.1127909, ⟨10.1117/12.2546590⟩
Popis: Since the observation of pyroelectric properties in oxygen depleted semiconducting Y-Ba-Cu-O, the interest of its amorphous phase (a-YBCO) obtained at low deposition temperature (150 °C) has been demonstrated for near-infrared (NIR) detection. At the core of the uncooled thermal detector development, there is the material choice for sensing the incoming radiation. Apart from its manufacturing compatibility with silicon technologies for further integration with readout electronics, a low noise level and a high value of the pyroelectric coefficient are highly desirable material properties. In the first part of this paper, we investigate room temperature noise performances of planar and trilayer detectors fabricated on silicon substrates. The best noise equivalent power (NEP) and detectivity D*, which are at the state of the art, were observed at 10 kHz modulation frequency: NEP = 2.0 pW/Hz1/2 and D* = 6.6×109 cm·Hz1/2/W for planar structures; NEP = 2.6 pW/Hz1/2 and D* = 5.7×109 cm·Hz1/2/W for trilayers. These detectors also exhibit a very fast response (time constant τ = 1.9 μs for planar, and τ = 0.12 μs for trilayer devices) as compared to commercially available pyroelectric sensors. In the second part, we examine the pyroelectric response of a-YBCO to extract the pyroelectric coefficient p. A first estimate of p gave a value as high as 600 μC·m−2·K−1 at 300 K. The pyroelectric figure of merit Fd which takes into account dielectric properties of the material (dielectric constant and dielectric losses) is also discussed with respect to results published for pyroelectric oxide thin films sputtered on silicon substrates.
Databáze: OpenAIRE