Structural and Electrical Characterization of 2' Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production
| Autor: | Theeradetch Detchprohm, Russell D. Dupuis, Edward Letts, Mi-Hee Ji, Chuan-Wei Tsou, Shyh-Chiang Shen, Marzieh Bakhtiary-Noodeh, Tadao Hashimoto, Daryl Key |
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| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
NEAT Gallium nitride 02 engineering and technology Substrate (electronics) Epitaxy 01 natural sciences lcsh:Technology Article law.invention GaN chemistry.chemical_compound law 0103 physical sciences Breakdown voltage General Materials Science Metalorganic vapour phase epitaxy bulk lcsh:Microscopy substrates Diode lcsh:QC120-168.85 010302 applied physics power devices lcsh:QH201-278.5 business.industry lcsh:T ammonothermal 021001 nanoscience & nanotechnology Full width at half maximum chemistry lcsh:TA1-2040 Optoelectronics lcsh:Descriptive and experimental mechanics lcsh:Electrical engineering. Electronics. Nuclear engineering 0210 nano-technology business lcsh:Engineering (General). Civil engineering (General) lcsh:TK1-9971 Light-emitting diode |
| Zdroj: | Materials, Vol 12, Iss 12, p 1925 (2019) Materials Volume 12 Issue 12 |
| ISSN: | 1996-1944 |
| Popis: | Free-standing gallium nitride (GaN) substrates are in high demand for power devices, laser diodes, and high-power light emitting diodes (LEDs). SixPoint Materials Inc. has begun producing 2&rdquo GaN substrates through our proprietary Near Equilibrium AmmonoThermal (NEAT) growth technology. In a single 90 day growth, eleven c-plane GaN boules were grown from free-standing hydride vapor phase epitaxy (HVPE) GaN substrates. The boules had an average X-ray rocking curve full width at half maximum (FWHM) of 33 ± 4 in the 002 reflection and 44 ± 6 in the 201 reflection using 0.3 mm divergence slits. The boules had an average radius of curvature of 10.16 ± 3.63 m. The quality of the boules was highly correlated to the quality of the seeds. A PIN diode grown at Georgia Tech on a NEAT GaN substrate had an ideality factor of 2.08, a high breakdown voltage of 1430 V, and Baliga&rsquo s Figure of Merit of > 9.2 GW/cm2. These initial results demonstrate the suitability of using NEAT GaN substrates for high-quality MOCVD growth and fabrication of high-power vertical GaN switching devices. |
| Databáze: | OpenAIRE |
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