Heterojunction p-Cu2O/n-Ga2O3 diode with high breakdown voltage
| Autor: | Yohei Yuda, Yuki Takiguchi, Tatsuro Watahiki, Mikio Yamamuka, Shinsuke Miyajima, Akihiko Furukawa |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) business.industry Band gap Wide-bandgap semiconductor Schottky diode Heterojunction 02 engineering and technology Sputter deposition 021001 nanoscience & nanotechnology 01 natural sciences 0103 physical sciences Optoelectronics Breakdown voltage Diffusion current 0210 nano-technology business Diode |
| Zdroj: | Applied Physics Letters. 111:222104 |
| Popis: | Heterojunction p-Cu2O/n-β-Ga2O3 diodes were fabricated on an epitaxially grown β-Ga2O3(001) layer. The reverse breakdown voltage of these p-n diodes reached 1.49 kV with a specific on-resistance of 8.2 mΩ cm2. The leakage current of the p-n diodes was lower than that of the Schottky barrier diode due to the higher barrier height against the electron. The ideality factor of the p-n diode was 1.31. It indicated that some portion of the recombination current at the interface contributed to the forward current, but the diffusion current was the dominant. The forward current more than 100 A/cm2 indicated the lower conduction band offset at the hetero-interface between Cu2O and Ga2O3 layers than that predicted from the bulk properties, resulting in such a high forward current without limitation. These results open the possibility of advanced device structures for wide bandgap Ga2O3 to achieve higher breakdown voltage and lower on-resistance. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|