Energy level Alignment Tuning at Tetracene c Si Interfaces
| Autor: | Engin Özkol, Patrick Amsalem, Rainer Eichberger, Rowan W. MacQueen, Martin Liebhaber, Jens Niederhausen, Katherine A. Mazzio, Mario Borgwardt, Florian Ruske, Klaus Lips, Clemens Gersmann, Moritz H. Futscher, Minh Hai Nguyen, Benjamin Daiber, Mathias Mews, Jörg Rappich, Bruno Ehrler, Dennis Friedrich |
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| Rok vydání: | 2020 |
| Předmět: |
Silicon
Materials science Interfaces chemistry.chemical_element 02 engineering and technology 010402 general chemistry Work function 01 natural sciences law.invention chemistry.chemical_compound law Solar cell Layered materials Crystalline silicon Physical and Theoretical Chemistry Deposition Methods and concepts for material development 500 Naturwissenschaften und Mathematik::530 Physik::539 Moderne Physik business.industry 021001 nanoscience & nanotechnology 0104 chemical sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials General Energy Tetracene chemistry Singlet fission Optoelectronics 0210 nano-technology business Deposition (chemistry) Energy (signal processing) |
| Popis: | The rational combination of tetracene Tc with crystalline silicon c Si could greatly enhance c Si solar cell efficiencies via singlet fission. The Tc c Si energy level alignment ELA is thought to be central to controlling the required interface transfer processes. We modified hydrogen terminated c Si H Si with 2,2 amp; 8242; perfluoronaphthalene 2,6 diylidene dimalononitrile F6TCNNQ , C60, or NF3 and probed the effect on the c Si surface chemistry, the Tc c Si ELA, the Tc morphology, and solar cell characteristics using ultraviolet and X ray photoelectron spectroscopy, atomic force microscopy, X ray diffraction, photoluminescence transients, device measurements, and transfer matrix optical modeling. Submonolayer interlayers of F6TCNNQ shifted the Tc H Si 111 ELA by up to 0.55 eV. C60 showed no notable effect on the ELA and proved detrimental for the Tc film morphology and solar cell performance. Neither F6TCNNQ nor C60 improved the Tc related photocurrent significantly. NF3 CVD substituted the H termination of H Si 100 with more electronegative species and resulted in work functions as high as 6 eV. This changed the Tc H Si 100 ELA by up to 0.45 eV. NF3 plasma from a remote source caused pronounced c Si oxidation and a diminished c Si photoluminescence lifetime, which was not observed for NF3 plasma created in close proximity to the c Si surface or neutral NF3. We discuss possible reasons for why the improved ELA does not lead to an improved singlet fission harvest |
| Databáze: | OpenAIRE |
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