High-gain bipolar detector on float-zone silicon
| Autor: | G.-F. Dalla Betta, Dejun Han, L. Bosisio, G. Batignani, Mario Giorgi, F. Forti, A. Del Guerra, Maurizio Boscardin |
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| Přispěvatelé: | Han, D. J., Batignani, G., Delguerra, A., DALLA BETTA, G. F., Boscardin, M., Bosisio, Luciano, Giorgi, M., Forti, F. |
| Rok vydání: | 2003 |
| Předmět: |
Physics
Nuclear and High Energy Physics Silicon business.industry Heterostructure-emitter bipolar transistor Bipolar junction transistor Detector chemistry.chemical_element Substrate (electronics) Carrier lifetime Float-zone silicon chemistry Optoelectronics Silicon bandgap temperature sensor business Instrumentation |
| Popis: | Since the float-zone (FZ) silicon has lower contaminations and longer minority-carrier lifetime than those in Czochralski silicon and other semiconductor materials, it has potential advantages to fabricate bipolar detectors on the high-purity FZ silicon substrate to achieve a high gain at ultra-low-signal levels. The authors present preliminary experimental results on a bipolar detector fabricated on an unusual high-purity FZ silicon substrate. A backside gettering layer of phosphorus-doped polysilicon was employed to preserve the long carrier lifetime of the high-purity FZ silicon. The device has been investigated in the detection of a continuous flux of X-ray and infrared light. The bipolar detector with a circular emitter of 2 mm diameter has demonstrated high gains up to 3820 for 22 keV X-ray from a 1 mCi Cd radioactive source (the X-ray photon flux, received by the detector is estimated to be B7.77 � 10 4 /s). High gain up to 4400 for 0.17 nW light with a wavelength of 0.83mm has been observed for the same device. r 2003 Elsevier B.V. All rights reserved. |
| Databáze: | OpenAIRE |
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