Evolution of Lattice Strain in Hydrogen-Implanted Silicon Prior to Layer Splitting: An X-Ray Scattering Study

Autor:	François Rieutord, Aurélie Tauzin, Frédéric Mazen, Luciana Capello, Fabrice Letertre, Nicolas Sousbie
Rok vydání:	2006
Předmět:	Lattice strain Crystallography Materials science Hydrogen chemistry Silicon Scattering X-ray chemistry.chemical_element Layer (electronics) Molecular physics
Zdroj:	ECS Transactions. 3:119-127
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.2357061
Popis:	We have investigated the effects of hydrogen implantation in silicon wafers by x-ray scattering methods. Different crystalline orientations for the Si single crystals were studied, namely (100), (110) and (111) Si. Large strains normal to the surface were evidenced after implantation, which depends on the Si orientation and can be explained on the basis of the different alignment of the Si-Si bonds with respect to the crystal surface. A comparison with the results from infrared spectroscopy shows that strain is associated to specific H- related point defects, such as monohydride multivacancy and H2*. Finally the evolution of the stressed structure during annealing is discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::328ca354edae01d762bbdda3880659dc https://doi.org/10.1149/1.2357061 Zobrazit plný text záznamu