Extension of the epitaxial shadow mask MBE technique for the monolithic integration and in situ fabrication of novel device structures

Autor: Stefan Malzer, U. Hilburger, W. Fix, R. Mayer, Werner Prost, Franz-Josef Tegude, Gottfried H. Döhler, W. Geißelbrecht, P. Velling
Rok vydání: 1999
Předmět:
Zdroj: Journal of Crystal Growth. :574-577
ISSN: 0022-0248
DOI: 10.1016/s0022-0248(98)01405-5
Popis: We present new methods for the in situ fabrication of novel device structures based on the epitaxial shadow mask (ESM) MBE technique. For high-quality selective contacts, the deposition of the dopants must exactly be aligned to the angular position of the substrate during growth. With a specially designed real-time software, we can either use the delta-doping (rotation and growth stopped while doping at a certain angular position) or the flash-doping technique (continuous rotation and growth with dopant shutters open in a certain angular window only). As an extension for devices where more than two selective contacts are required, an enhanced version of the shadow mask, a 2D-patterned one, is presented. In order to monolithically integrate a n–i–p–i modulator with a photoconductive switch and a reference diode, we also introduce a new technique using a special kind of shadow mask. Selective etch processes allow to integrate functional epi-layers into a “smart” shadow mask and to fabricate monolithically integrated smart pixels (MISPs), which are suitable for 2D arrays.
Databáze: OpenAIRE
Externí odkaz: