N-Type Self-Assembled Monolayer Field-Effect Transistors and Complementary Inverters

Autor: Fatemeh Gholamrezaie, Xiaoran Li, Cees van der Marel, G Gerwin Gelinck, Armin Moser, Dago M. de Leeuw, Alfred Neuhold, Andreas Ringk, Roland Resel, Peter Strohriegl, Ecp Edsger Smits
Přispěvatelé: Zernike Institute for Advanced Materials, Stimuli-responsive Funct. Materials & Dev., Macromolecular and Organic Chemistry
Rok vydání: 2012
Předmět:
Electron mobility
ORGANIC INTEGRATED-CIRCUITS
HOL - Holst
High Tech Systems & Materials
MOLECULAR ORDER
02 engineering and technology
Field effect transistors
SEMICONDUCTORS
01 natural sciences
law.invention
chemistry.chemical_compound
Perylene derivatives
law
Active molecules
CHARGE-TRANSPORT
Electrochemistry
perylene bisimide
TS - Technical Sciences
Industrial Innovation
PACKING
DERIVATIVES
Transistor
021001 nanoscience & nanotechnology
Condensed Matter Physics
Electronic
Optical and Magnetic Materials
n-type field-effect transistor
Perylene bisimides
Optoelectronics
Field-effect transistor
0210 nano-technology
Transistor channels
BEHAVIOR
Perylene
Self assembled monolayers
Materials science
Nanotechnology
Dielectric
Transistors
010402 general chemistry
Biomaterials
Organic acids
Phosphonic acids
Monolayer
Complementary inverters
STABILITY
business.industry
complementary inverter
SURFACES
Self-assembled monolayer
Mechatronics
Mechanics & Materials
0104 chemical sciences
organic circuits
Semiconductor
chemistry
self-assembled monolayer
MOBILITY
Electronics
business
ON/OFF current ratio
Zdroj: Advanced Functional Materials, 23(16), 2016-2023. WILEY-V C H VERLAG GMBH
Advanced Functional Materials, 16, 23, 2016-2023
Advanced Functional Materials, 23(16), 2016-2023. Wiley-VCH Verlag
ISSN: 1616-301X
DOI: 10.1002/adfm.201202888
Popis: This work describes n-type self-assembled monolayer field-effect transistors (SAMFETs) based on a perylene derivative which is covalently fixed to an aluminum oxide dielectric via a phosphonic acid linker. N-type SAMFETs spontaneously formed by a single layer of active molecules are demonstrated for transistor channel length up to 100 μm. Highly reproducible transistors with electron mobilities of 1.5 × 10-3 cm2 V-1 s-1 and on/off current ratios up to 105 are obtained. By implementing n-type and p-type transistors in one device, a complimentary inverter based solely on SAMFETs is demonstrated for the first time. Highly reproducible n-type self-assembled monolayer field-effect transistors (SAMFETs) based on a perylene derivative are reported. Electron mobilities of 1.5 × 10-3 cm2 V-1s-1 and on/off current ratios up to 105 are obtained. By implementing n-type and p-type transistors in one device, a complimentary inverter based solely on SAMFETs is demonstrated for the first time. Copyright (c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Databáze: OpenAIRE
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