Interband impact ionization by terahertz illumination of InAs heterostructures

Autor:	Andrea Markelz, Elisabeth G. Gwinn, B. Brar, N. G. Asmar
Rok vydání:	1996
Předmět:	Physics Physics and Astronomy (miscellaneous) Terahertz radiation Infrared business.industry Charge density Field strength Heterojunction Impact ionization Ionization Electric field Optoelectronics Atomic physics business
Zdroj:	Scopus-Elsevier
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.117842
Popis:	Experimental studies of InAs heterostructures illuminated by far‐infrared (FIR) radiation reveal an abrupt increase in the charge density for FIR intensities above a threshold value that rises with increasing frequency. We attribute this charge density rise to interband impact ionization in a regime in which ωτm∼1, where τm is the momentum relaxation time, and f=ω/2π is the FIR frequency. The dependence of the density rise on the FIR field strength supports this interpretation, and gives threshold fields of 3.7–8.9 kV/cm for the frequency range 0.3–0.66 THz.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::321407ce5df47e8f4c1b7db01672b7d2 https://doi.org/10.1063/1.117842 Zobrazit plný text záznamu