Site-controlled Ag nanocrystals grown by molecular beam epitaxy-Towards plasmonic integration technology
| Autor: | AJ Adam Urbanczyk, R Richard Nötzel |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
General Physics and Astronomy Physics::Optics Nanotechnology 02 engineering and technology Epitaxy 01 natural sciences Gallium arsenide chemistry.chemical_compound Condensed Matter::Materials Science 0103 physical sciences Physics::Atomic and Molecular Clusters 010306 general physics Plasmon Telecomunicaciones business.industry Condensed Matter::Other 021001 nanoscience & nanotechnology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect chemistry Molecular beam epitaxial growth Nanocrystal Quantum dot Optoelectronics Electrónica 0210 nano-technology Plasmonic nanostructures business Molecular beam epitaxy |
| Zdroj: | Journal of Applied Physics, ISSN 0021-8979, 2012-12, Vol. 112, No. 12 Archivo Digital UPM Universidad Politécnica de Madrid |
| Popis: | We demonstrate site-controlled growth of epitaxial Ag nanocrystals on patterned GaAs substrates by molecular beam epitaxy with high degree of long-range uniformity. The alignment is based on lithographically defined holes in which position controlled InAs quantum dots are grown. The Ag nanocrystals self-align preferentially on top of the InAs quantum dots. No such ordering is observed in the absence of InAs quantum dots, proving that the ordering is strain-driven. The presented technique facilitates the placement of active plasmonic nanostructures at arbitrarily defined positions enabling their integration into complex devices and plasmonic circuits. |
| Databáze: | OpenAIRE |
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