Vacuum-Deposited Cesium Tin Iodide Thin Films with Tunable Thermoelectric Properties
| Autor: | Francisco Palazon, Bas Huisman, Henk Bolink, Lambert Jan Anton Koster, Unnati Pokharel, Paz Sebastia Luna |
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| Přispěvatelé: | Photophysics and OptoElectronics |
| Jazyk: | angličtina |
| Rok vydání: | 2022 |
| Předmět: | |
| Zdroj: | Sebastia-Luna, Paz Pokharel, Unnati Huisman, Bas A. H. Koster, L. Jan Anton Palazón Huet, Francisco Bolink, Henk 2022 Vacuum-Deposited Cesium Tin Iodide Thin Films with Tunable Thermoelectric Properties Acs Applied Energy Materials 5 8 10216 10223 ACS Applied Energy Materials, 5(8), 10216-10223. AMER CHEMICAL SOC RODERIC. Repositorio Institucional de la Universitat de Valéncia Universitat Politècnica de Catalunya (UPC) |
| ISSN: | 2574-0962 |
| Popis: | Most current thermoelectric materials have important drawbacks, such as toxicity, scarceness, and peak operating temperatures above 300 °C. Herein, we report the thermoelectric properties of different crystalline phases of Sn-based perovskite thin films. The 2D phase, Cs2SnI4, is obtained through vacuum thermal deposition and easily converted into the black β phase of CsSnI3(B-β CsSnI3) by annealing at 150 °C. B-β CsSnI3is a p-type semiconductor with a figure of merit (ZT) ranging from 0.021 to 0.033 for temperatures below 100 °C, which makes it a promising candidate to power small electronic devices such as wearable sensors which may be interconnected in the so-called Internet of Things. The B-β phase is stable in nitrogen, whereas it spontaneously oxidizes to Cs2SnI6upon exposure to air. Cs2SnI6shows a negative Seebeck coefficient and an ultralow thermal conductivity. However, the ZT values are 1 order of magnitude lower than for B-β CsSnI3due to a considerably lower electrical conductivity. |
| Databáze: | OpenAIRE |
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