Area Selective Growth of Titanium Diselenide Thin Films into Micropatterned Substrates by Low-Pressure Chemical Vapor Deposition
| Autor: | C.H. de Groot, Ruomeng Huang, Fiona Thomas, Gillian Reid, Stuart Pearce, Andrew L. Hector, Chitra Gurnani, Sophie L. Benjamin, Konstantin Ignatyev, William Levason |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Scanning electron microscope General Chemical Engineering microfocus X-ray diffraction chemistry.chemical_element 02 engineering and technology Substrate (electronics) Chemical vapor deposition 010402 general chemistry 01 natural sciences Article chemical vapor deposition chemistry.chemical_compound symbols.namesake titanium selenide Materials Chemistry Thin film Selective deposition General Chemistry 021001 nanoscience & nanotechnology selenoether 0104 chemical sciences Titanium diselenide Crystallography chemistry single-source precursor symbols Crystallite 0210 nano-technology Tin Raman spectroscopy |
| Zdroj: | Chemistry of Materials |
| ISSN: | 1520-5002 0897-4756 |
| DOI: | 10.1021/cm402422e |
| Popis: | The neutral, distorted octahedral complex [TiCl4(Se n Bu2)2] (1), prepared from the reaction of TiCl4 with the neutral Se n Bu2 in a 1:2 ratio and characterized by IR and multinuclear (1H, 13C{1H}, 77Se{1H}) NMR spectroscopy and microanalysis, serves as an efficient single-source precursor for low-pressure chemical vapor deposition (LPCVD) of titanium diselenide, TiSe2, films onto SiO2 and TiN substrates. X-ray diffraction patterns on the deposited films are consistent with single-phase, hexagonal 1T-TiSe2 (P3m1), with evidence of some preferred orientation of the crystallites in thicker films. The composition and structural morphology was confirmed by scanning electron microscopy (SEM), energy dispersive X-ray, and Raman spectroscopy. SEM imaging shows hexagonal plate crystallites growing perpendicular to the substrate, but these tend to align parallel to the surface when the quantity of reagent is reduced. The resistivity of the crystalline TiSe2 films is 3.36 ± 0.05 × 10-3 Ω·cm with a carrier density of 1 × 1022 cm-3. Very highly selective film growth from the reagent was observed onto photolithographically patterned substrates, with film growth strongly preferred onto the conducting TiN surfaces of SiO2/TiN patterned substrates. TiSe2 is selectively deposited within the smallest 2 μm diameter TiN holes of the patterned TiN/SiO2 substrates. The variation in crystallite size with different diameter holes is determined by microfocus X-ray diffraction and SEM, revealing that the dimensions increase with the hole size, but that the thickness of the crystals stops increasing above ∼20 μm hole size, whereas their lengths/widths continue to increase. |
| Databáze: | OpenAIRE |
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