Shedding light on the negative differential resistance effect observed in organic thin-film transistors
Autor: | Eloi Ros, Pablo Ortega, Dolores Velasco, Joaquim Puigdollers, Cristobal Voz, Marta Reig, Gintautas Bagdziunas |
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Přispěvatelé: | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica, Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
Jazyk: | angličtina |
Rok vydání: | 2020 |
Předmět: |
Semiconductors orgànics
Organic field-effect transistor Materials science business.industry Negative differential resistance Física::Física de l'estat sòlid::Semiconductors [Àrees temàtiques de la UPC] Density of states Transistors Electronic Optical and Magnetic Materials Organic semiconductor Enginyeria electrònica::Components electrònics::Transistors [Àrees temàtiques de la UPC] Thin-film transistor Organic semiconductors Materials Chemistry Electrochemistry NDR Optoelectronics OFET Electronics business Energy levels Differential (mathematics) |
Zdroj: | UPCommons. Portal del coneixement obert de la UPC Universitat Politècnica de Catalunya (UPC) |
Popis: | This document is the unedited Author’s version of a Submitted Work that was subsequently accepted for publication in ACS Applied Electronic Materials, copyright © American Chemical Society after peer review. To access the final edited and published work see https://pubs.acs.org/doi/full/10.1021/acsaelm.0c00183 Organic semiconductor electronics has the potential to become a solid and industrially feasible technology, with new and stimulating applications such as the flexible and transparent electronic devices. However, organic devices still have some drawbacks that must be solved to assure quality and reliability in complex electronic systems. In this work, we focus our attention to the physical origin involved in the negative differential resistance phenomenon, often observed in the output electrical characteristics of organic thin-film transistors but rarely analyzed. This work was supported by the Spanish Government throughProjects ENE2016-78933-C4-1-R, ENE2017-87671-C3-2-R,and TEC2017-82305-R. |
Databáze: | OpenAIRE |
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