Critical effect of nanometer-size surface roughness of a porous Si seed layer on the defect density of epitaxial Si films for solar cells by rapid vapor deposition
| Autor: | Manabu Ihara, Chiaki Takazawa, Kei Hasegawa, Makoto Fujita, Suguru Noda |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
technology industry and agriculture food and beverages Recrystallization (metallurgy) 02 engineering and technology General Chemistry Surface finish Chemical vapor deposition 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences 0104 chemical sciences Monocrystalline silicon Surface roughness General Materials Science Thin film Composite material 0210 nano-technology Porosity |
| Zdroj: | CrystEngComm. 20:1774-1778 |
| ISSN: | 1466-8033 |
| Popis: | Monocrystalline, low-defect density Si thin films were successfully fabricated via epitaxy with 1 minute rapid vapor deposition on a porous seed layer. Zone heating recrystallization reduced the surface roughness of the seed layer to sub-nanometer size. The critical effect of roughness on the defect density of epitaxial films was confirmed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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