Significant effect of interfacial spin moments in ferromagnet-semiconductor heterojunctions on spin transport in a semiconductor
| Autor: | T. Naito, R. Nishimura, M. Yamada, A. Masago, Y. Shiratsuchi, Y. Wagatsuma, K. Sawano, R. Nakatani, T. Oguchi, K. Hamaya |
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| Rok vydání: | 2022 |
| Zdroj: | Physical Review B. 105 |
| ISSN: | 2469-9969 2469-9950 |
| DOI: | 10.1103/physrevb.105.195308 |
| Popis: | T. Naito, R. Nishimura, M. Yamada, A. Masago, Y. Shiratsuchi, Y. Wagatsuma, K. Sawano, R. Nakatani, T. Oguchi, and K. Hamaya, Significant effect of interfacial spin moments in ferromagnet-semiconductor heterojunctions on spin transport in a semiconductor, Phys. Rev. B 105, 195308. Using controlled ferromagnet (FM) -semiconductor (SC) interfaces in SC-based lateral spin-valve (LSV) devices, we experimentally study the effect of interfacial spin moments in FM-SC heterojunctions on spin transport in SC. First-principles calculations predict that the spin moment of FM-SC junctions can be artificially reduced by inserting 3d transition metal V, Cr, or Cu atomic layers between FM and SC. When all-epitaxial FM-SC Schottky-tunnel contacts with a 0.4-0.5-nm-thick V, Cr, or Cu interfacial layer are formed, we find that the spin signals in FM-SC LSV devices are significantly decreased at 8 K. When we increase the interfacial spin moment by inserting an ∼0.3-nm-thick Co layer between FM and SC, the spin signals at 8 K are significantly enhanced again. From these experiments, we conclude that the interfacial spin moments at FM-SC interfaces are one of the important factors to achieve large spin signals even in SC-based spintronic devices. |
| Databáze: | OpenAIRE |
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