Magnetic Random Access Memory based non-volatile asynchronous Muller cell for ultra-low power autonomous applications
Autor: | Edith Beigne, Eldar Zianbetov, G. Di Pendina |
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Přispěvatelé: | Prenat, Guillaume, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)) |
Jazyk: | angličtina |
Rok vydání: | 2015 |
Předmět: |
business.industry
Computer science [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics Electrical engineering General Physics and Astronomy Biasing Integrated circuit law.invention CMOS Nanoelectronics law Asynchronous communication Low-power electronics Hardware_INTEGRATEDCIRCUITS [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics business ComputingMilieux_MISCELLANEOUS Electronic circuit Voltage |
Zdroj: | Journal of Applied Physics Journal of Applied Physics, American Institute of Physics, 2015, 117 (17), pp.17B517 HAL Journal of Applied Physics, 2015, 117 (17), pp.17B517 |
ISSN: | 0021-8979 1089-7550 |
Popis: | Micro and nano electronic integrated circuit domain is today mainly driven by the advent of the Internet of Things for which the constraints are strong, especially in terms of power consumption and autonomy, not only during the computing phases but also during the standby or idle phases. In such ultra-low power applications, the circuit has to meet new constraints mainly linked to its changing energetic environment: long idle phases, automatic wake up, data back-up when the circuit is sporadically turned off, and ultra-low voltage power supply operation. Such circuits have to be completely autonomous regarding their unstable environment, while remaining in an optimum energetic configuration. Therefore, we propose in this paper the first MRAM-based non-volatile asynchronous Muller cell. This cell has been simulated and characterized in a very advanced 28 nm CMOS fully depleted silicon-on-insulator technology, presenting good power performance results due to an extremely efficient body biasing control together with ultra-wide supply voltage range from 160 mV up to 920 mV. The leakage current can be reduced to 154 pA thanks to reverse body biasing. We also propose an efficient standard CMOS bulk version of this cell in order to be compatible with different fabrication processes. |
Databáze: | OpenAIRE |
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