Normally-off sputtered-MoS2 nMISFETs with TiN top-gate electrode all defined by optical lithography for chip-level integration
| Autor: | Atsushi Hori, Kazuo Tsutsui, Takuya Hamada, Takuro Sakamoto, Atsushi Ogura, Hitoshi Wakabayashi, Haruki Tanigawa, Takamasa Kawanago, Kentaro Matsuura, Iriya Muneta, Kuniyuki Kakushima, Masaya Hamada |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) business.industry General Engineering General Physics and Astronomy chemistry.chemical_element Normally off Chip law.invention chemistry.chemical_compound chemistry law Sputtering Electrode Optoelectronics Photolithography Tin business Molybdenum disulfide |
| Zdroj: | Japanese Journal of Applied Physics. 59:080906 |
| ISSN: | 1347-4065 0021-4922 |
| Popis: | We demonstrate chip-level integrated n-type metal–insulator–semiconductor field effect transistors with a sputtered molybdenum disulfide (MoS2) thin channel and titanium nitride top-gate electrode, all defined by optical lithography. The devices successfully exhibit a normally-off operation and the highest off-voltage. This is achieved by the single dielectric layer and forming gas annealing, which reduce the positive fixed charges in aluminum oxide (Al2O3) film and interface trap densities between the MoS2 and Al2O3 films, respectively. These normally-off MISFETs are suitable for internet-of-things edge devices with low energy consumption using two-dimensional materials in the future. |
| Databáze: | OpenAIRE |
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