In-situ study of the diffusion-reaction mechanism in Mo/Si multilayered films
| Autor: | S. Bruijn, Andrey E. Yakshin, R. W. E. van de Kruijs, Frederik Bijkerk |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
Silicon Diffusion Analytical chemistry General Physics and Astronomy chemistry.chemical_element Surfaces and Interfaces General Chemistry Activation energy Atmospheric temperature range Condensed Matter Physics Fick's laws of diffusion Surfaces Coatings and Films Crystallography chemistry X-ray crystallography Nanometre Thin film |
| Zdroj: | Applied Surface Science, 257, 2707-2711 |
| ISSN: | 0169-4332 2707-2711 |
| DOI: | 10.1016/j.apsusc.2010.10.049 |
| Popis: | We present a low temperature diffusion study on the formation of intermixing zones between periodic, nanometer thick films consisting of Mo and Si. An in-situ X-ray diffraction method at pm-accuracy was developed, including a model that explains the period change observed by diffusion limited interface growth. Experiments were carried out on Mo/Si multilayered films in the temperature range of 100-275 degrees C, resulting in the determination of diffusion coefficients. Temperature scaling showed Arrhenius-type behavior of the diffusion constant over the entire temperature range, with an activation energy of 0.5 eV. (C) 2010 Elsevier B.V. All rights reserved. |
| Databáze: | OpenAIRE |
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