Low-frequency noise measurements at liquid helium temperature operation in ultra-thin buried oxide transistors – Physical interpretation of transport phenomena
| Autor: | B. Nafaa, O. Touayar, N. Ismail, Bogdan Cretu, Eddy Simoen, Anabela Veloso, Régis Carin |
|---|---|
| Přispěvatelé: | Equipe Electronique - Laboratoire GREYC - UMR6072, Groupe de Recherche en Informatique, Image et Instrumentation de Caen (GREYC), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU), Institut National des Sciences Appliquées et de Technologie - Carthage (INSAT Carthage), IMEC (IMEC), Catholic University of Leuven - Katholieke Universiteit Leuven (KU Leuven) |
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics Liquid helium Scattering Infrasound Silicon on insulator 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Polarization (waves) 01 natural sciences Electronic Optical and Magnetic Materials law.invention law 0103 physical sciences Materials Chemistry Flicker noise Electrical and Electronic Engineering [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics 0210 nano-technology Electronic band structure Transport phenomena ComputingMilieux_MISCELLANEOUS |
| Zdroj: | Solid-State Electronics Solid-State Electronics, Elsevier, 2018, 150, pp.1-7. ⟨10.1016/j.sse.2018.08.010⟩ |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2018.08.010⟩ |
| Popis: | In this work, UTBOX SOI nMOSFETs have been studied at liquid helium temperature (i.e. 4.2 K). Transfer characteristics at very low temperature and polarization evidenced step-like effects that can be associated to energy subband scattering. Low frequency noise measurements were performed at the same temperature in polarization conditions corresponding to drift-diffusion and quantum transport related to energy subband scattering, respectively. A theoretical approach valid in moderate inversion is constructed for the mobility fluctuations and carrier number fluctuations with correlated mobility fluctuations models at this temperature operation. It was observed that flicker noise originates from carrier number fluctuations when the drift-diffusion transport is dominant. In quantum transport related to energy band scattering condition, the results suggest that the mobility fluctuations mechanism is suitable to explain the flicker noise behavior. |
| Databáze: | OpenAIRE |
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