Exploiting a Single-Crystal Environment to Minimize the Charge Noise on Qubits in Silicon
Autor: | S. K. Gorman, Daniel Keith, Yu He, Ludwik Kranz, JG Joris Keizer, Brandur Thorgrimsson, Michelle Y. Simmons |
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Rok vydání: | 2020 |
Předmět: |
Materials science
Spins business.industry Mechanical Engineering Dephasing Coulomb blockade Charge (physics) Quantum Physics 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Noise (electronics) 0104 chemical sciences Computer Science::Emerging Technologies Semiconductor Mechanics of Materials Qubit Optoelectronics General Materials Science Hardware_ARITHMETICANDLOGICSTRUCTURES 0210 nano-technology business Quantum computer |
Zdroj: | Advanced materials (Deerfield Beach, Fla.). 32(40) |
ISSN: | 1521-4095 |
Popis: | Electron spins in silicon offer a competitive, scalable quantum-computing platform with excellent single-qubit properties. However, the two-qubit gate fidelities achieved so far have fallen short of the 99% threshold required for large-scale error-corrected quantum computing architectures. In the past few years, there has been a growing realization that the critical obstacle in meeting this threshold in semiconductor qubits is charge noise arising from the qubit environment. In this work, a notably low level of charge noise of S0 = 0.0088 ± 0.0004 μeV2 Hz-1 is demonstrated using atom qubits in crystalline silicon, achieved by separating the qubits from surfaces and interface states. The charge noise is measured using both a single electron transistor and an exchange-coupled qubit pair that collectively provide a consistent charge noise spectrum over four frequency decades, with the noise level S0 being an order of magnitude lower than previously reported. Low-frequency detuning noise, set by the total measurement time, is shown to be the dominant dephasing source of two-qubit exchange oscillations. With recent advances in fast (≈μs) single-shot readout, it is shown that by reducing the total measurement time to ≈1 s, 99.99% two-qubit SWAP gate fidelities can be achieved in single-crystal atom qubits in silicon. |
Databáze: | OpenAIRE |
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