Exploiting a Single-Crystal Environment to Minimize the Charge Noise on Qubits in Silicon

Autor: S. K. Gorman, Daniel Keith, Yu He, Ludwik Kranz, JG Joris Keizer, Brandur Thorgrimsson, Michelle Y. Simmons
Rok vydání: 2020
Předmět:
Zdroj: Advanced materials (Deerfield Beach, Fla.). 32(40)
ISSN: 1521-4095
Popis: Electron spins in silicon offer a competitive, scalable quantum-computing platform with excellent single-qubit properties. However, the two-qubit gate fidelities achieved so far have fallen short of the 99% threshold required for large-scale error-corrected quantum computing architectures. In the past few years, there has been a growing realization that the critical obstacle in meeting this threshold in semiconductor qubits is charge noise arising from the qubit environment. In this work, a notably low level of charge noise of S0 = 0.0088 ± 0.0004 μeV2 Hz-1 is demonstrated using atom qubits in crystalline silicon, achieved by separating the qubits from surfaces and interface states. The charge noise is measured using both a single electron transistor and an exchange-coupled qubit pair that collectively provide a consistent charge noise spectrum over four frequency decades, with the noise level S0 being an order of magnitude lower than previously reported. Low-frequency detuning noise, set by the total measurement time, is shown to be the dominant dephasing source of two-qubit exchange oscillations. With recent advances in fast (≈μs) single-shot readout, it is shown that by reducing the total measurement time to ≈1 s, 99.99% two-qubit SWAP gate fidelities can be achieved in single-crystal atom qubits in silicon.
Databáze: OpenAIRE