Crystallization of zirconia based thin films
| Autor: | Kazimierz Conder, Ruggero Frison, Dieter Stender, Ludwig J. Gauckler, Alexander Wokaun, Christof W. Schneider, Jennifer L. M. Rupp, Barbara Scherrer, Thomas Lippert, Julia Martynczuk |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
Analytical chemistry General Physics and Astronomy 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Amorphous solid law.invention Pulsed laser deposition Crystallography law Sputtering Cubic zirconia Physical and Theoretical Chemistry Crystallization Thin film 0210 nano-technology Yttria-stabilized zirconia Diffractometer |
| Zdroj: | Physical Chemistry Chemical Physics |
| DOI: | 10.1039/c5cp02631h |
| Popis: | The crystallization kinetics of amorphous 3 and 8 mol% yttria stabilized zirconia (3YSZ and 8YSZ) thin films grown by pulsed laser deposition (PLD), spray pyrolysis and dc-magnetron sputtering are explored. The deposited films were heat treated up to 1000 °C ex situ and in situ in an X-ray diffractometer. A minimum temperature of 275 °C was determined at which as-deposited amorphous PLD grown 3YSZ films fully crystallize within five hours. Above 325 °C these films transform nearly instantaneously with a high degree of micro-strain when crystallized below 500 °C. In these films the t′′ phase crystallizes which transforms at T > 600 °C to the t′ phase upon relaxation of the micro-strain. Furthermore, the crystallization of 8YSZ thin films grown by PLD, spray pyrolysis and dc-sputtering are characterized by in situ XRD measurements. At a constant heating rate of 2.4 K min−1 crystallization is accomplished after reaching 800 °C, while PLD grown thin films were completely crystallized already at ca. 300 °C. |
| Databáze: | OpenAIRE |
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