Nanoscale resistive switching memory devices: a review
| Autor: | Thomas Mikolajick, Stefan Slesazeck |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Magnetoresistive random-access memory
Materials science Mechanical Engineering Bioengineering 02 engineering and technology General Chemistry 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Bottleneck 0104 chemical sciences CMOS Neuromorphic engineering Mechanics of Materials Electronic engineering ddc:530 General Materials Science State (computer science) Electrical and Electronic Engineering Resistive switching memory resistives Schalten Nanoskala Valenzwechselspeicher (VCM) Phasenwechselspeicher (PCM) nichtflüchtiger Speicher (NVM) Spin-Transfer-Torque-MRAM (STT-MRAM) ferroelektrischer Tunnelübergang (FTJ) 0210 nano-technology Nanoscopic scale resistive switching nanoscale Valence change memories (VCM) Phase change memory (PCM) non-volatile memory (NVM) Spin-transfer-torque MRAM (STT-MRAM) Ferroelectric tunnel junction (FTJ) Electronic circuit |
| Zdroj: | Nanotechnology. 30:352003 |
| ISSN: | 1361-6528 0957-4484 |
| DOI: | 10.1088/1361-6528/ab2084 |
| Popis: | In this review the different concepts of nanoscale resistive switching memory devices are described and classified according to their I-V behaviour and the underlying physical switching mechanisms. By means of the most important representative devices, the current state of electrical performance characteristics is illuminated in-depth. Moreover, the ability of resistive switching devices to be integrated into state-of-the-art CMOS circuits under the additional consideration with a suitable selector device for memory array operation is assessed. From this analysis, and by factoring in the maturity of the different concepts, a ranking methodology for application of the nanoscale resistive switching memory devices in the memory landscape is derived. Finally, the suitability of the different device concepts for beyond pure memory applications, such as brain inspired and neuromorphic computational or logic in memory applications that strive to overcome the vanNeumann bottleneck, is discussed. |
| Databáze: | OpenAIRE |
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