High-performance devices from surface-conducting thin-film diamond

Autor:	John S. Foord, Lisa Y.S. Pang, Michael D. Whitfield, Richard B. Jackman, Hui Jin Looi
Rok vydání:	1999
Předmět:	Materials science business.industry Schottky diode Diamond General Chemistry engineering.material Surface conductivity engineering Optoelectronics General Materials Science Field-effect transistor MESFET Thin film business Leakage (electronics) Diode
Zdroj:	Carbon. 37:817-822
ISSN:	0008-6223
DOI:	10.1016/s0008-6223(98)00277-2
Popis:	Early predictions that diamond would be a suitable material for high-performance high-power devices were not supported by the characteristics of diodes and field effect transistors (FETs) fabricated on boron doped (p-type) thin-film material. In this paper commercially accessible polycrystalline thin-film diamond has been turned p-type by the incorporation of near-surface hydrogen, a type of film often referred to as `surface conducting'. Schottky diodes and metal-semiconductor FETs (MESFETs) have been fabricated using this approach which display unprecedented performance levels; diodes with a rectification ratio >106, leakage currents
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::309eec046a600e50ada174a05983a8e6 https://doi.org/10.1016/s0008-6223(98)00277-2 Zobrazit plný text záznamu Full Text from ScienceDirect