Characterization of vacancy-type defects and phosphorus donors introduced in 6H-SiC by ion implantation
| Autor: | Takeshi Ohshima, Isamu Nashiyama, Akira Uedono, K. Abe, Yasushi Aoki, S. Tanigawa, Hisayoshi Itoh, Masahito Yoshikawa |
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| Rok vydání: | 1998 |
| Předmět: | |
| Zdroj: | Scopus-Elsevier |
| ISSN: | 1432-0630 0947-8396 |
| Popis: | Positron annihilation measurements using monoenergetic positron beams were performed to study vacancy-type defects introduced into 6H-SiC by implantation of phosphorus ions, P, and the interactions among such defects due to annealing up to 1500°C. In as-implanted samples, residual defects are found to be mainly divacancies. The annealing behavior of these defects can be divided into three annealing stages, in which a change in the mean defect size and an elimination of defective layers are observed. An increase of the mean defect size in stage I (RT - 700°C) can be attributed to the combination of vacancy-type defects due to the migration of monovacancies. In stage II (700-1000 °C), the formation of large vacancy clusters is observed. In contrast, a decrease in the mean size of vacancy clusters occurs in stage III (1000- 1400 ° C ). Almost all vacancy-type defects are annealed out at 1400°C. The electron concentration at RT increases markedly with annealing temperature up to 1400°C, which is explained in terms of the removal of vacancy-type defects in the implanted layer and the electrical activation of implanted P atoms by annealing. |
| Databáze: | OpenAIRE |
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