Numerical Study of the Coupling of Sub-Terahertz Radiation to n-Channel Strained-Silicon MODFETs
| Autor: | Jaime Calvo-Gallego, Juan A. Delgado-Notario, Abdelaziz El Moussaouy, Jesus E. Velázquez-Pérez, Kristel Fobelets, Yahya Moubarak Meziani, Miguel Ferrando-Bataller |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
strained-Si
Silicon Materials science Terahertz radiation SiGe Terahertz Strained-Si 02 engineering and technology lcsh:Chemical technology 01 natural sciences Biochemistry Analytical Chemistry law.invention terahertz symbols.namesake Electromagnetic simulation law Electric field 0103 physical sciences TEORIA DE LA SEÑAL Y COMUNICACIONES lcsh:TP1-1185 Electrical and Electronic Engineering Instrumentation electromagnetic simulation 010302 applied physics Coupling business.industry Communication Transistor silicon Strained silicon MODFET Plasma 021001 nanoscience & nanotechnology Atomic and Molecular Physics and Optics Maxwell's equations symbols Optoelectronics 0210 nano-technology business Excitation |
| Zdroj: | Sensors, Vol 21, Iss 688, p 688 (2021) RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia instname Sensors (Basel, Switzerland) |
| ISSN: | 1424-8220 |
| Popis: | [EN] This paper reports on a study of the response of a T-gate strained-Si MODFETs (modulation-doped field-effect transistor) under continuous-wave sub-THz excitation. The sub-THz response was measured using a two-tones solid-state source at 0.15 and 0.30 THz. The device response in the photovoltaic mode was non-resonant, in agreement with the Dyakonov and Shur model for plasma waves detectors. The maximum of the photoresponse was clearly higher under THz illumination at 0.15 THz than at 0.3 THz. A numerical study was conducted using three-dimensional (3D) electromagnetic simulations to delve into the coupling of THz radiation to the channel of the transistor. 3D simulations solving the Maxwell equations using a time-domain solver were performed. Simulations considering the full transistor structure, but without taking into account the bonding wires used to contact the transistor pads in experiments, showed an irrelevant role of the gate length in the coupling of the radiation to the device channel. Simulations, in contradiction with measurements, pointed to a better response at 0.3 THz than under 0.15 THz excitation in terms of the normalized electric field inside the channel. When including four 0.25 mm long bonding wires connected to the contact pads on the transistor, the normalized internal electric field induced along the transistor channel by the 0.15 THz beam was increased in 25 dB, revealing, therefore, the important role played by the bonding wires at this frequency. As a result, the more intense response of the transistor at 0.15 THz than at 0.3 THz experimentally found, must be attributed to the bonding wires. This research was funded by the Ministerio de Ciencia, Investigacion y Universidades of Spain (Spanish Ministry of Science, Innovation, and Universities) and FEDER (ERDF: European Regional Development Fund) under the Research Grants numbers RTI2018-097180-B-100, PID2019-107885GB-C3-2 and TEC2016-78028-C3-3-P and FEDER/Junta de Castilla y Leon Research Grant numbers SA256P18 and SA121P20. Also by Conselleria d'Educacio, lnvestigacio, Cultura i Esport, Generalitat Valenciana (Spain) through the grant AIC0/2019/018. The APC was funded by Universidad de Salamanca. |
| Databáze: | OpenAIRE |
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