Optoelectronic THz mixer based on iron-doped InGaAs in a plasmonic microcavity
Autor: | C. Tannoury, V. Merupo, V. Avramovic, R. B. Kohlhaas, G. Ducournau, B. Globisch, E. Peytavit |
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Přispěvatelé: | Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Fraunhofer Institute for Telecommunications - Heinrich Hertz Institute (Fraunhofer HHI), Fraunhofer (Fraunhofer-Gesellschaft), Photonique THz - IEMN (PHOTONIQUE THZ - IEMN), no information, PCMP CHOP |
Jazyk: | angličtina |
Rok vydání: | 2022 |
Předmět: | |
Zdroj: | 2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) 2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), Aug 2022, Delft, Netherlands. pp.1-1, ⟨10.1109/IRMMW-THz50927.2022.9895790⟩ |
Popis: | International audience; We present an optoelectronic THz mixer based on irondoped InGaAs integrated into a plasmonic microcavity. The measured conversion loss is as low as ∼30 dB at 300 GHz, which constitutes a 30 dB improvement in comparison to state-of-the-art photoconductors without a plasmonic microcavity. In particular for application as receivers in high-data rate wireless telecom the presented design is very promising. |
Databáze: | OpenAIRE |
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