On the mechanism of ion-induced bending of nanostructures
| Autor: | A.A. Turkin, Diego Ribas Gomes, J.T.M. de Hosson, D. Vainchtein |
|---|---|
| Přispěvatelé: | Zernike Institute for Advanced Materials |
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Nanostructure Cantilever Materials science General Physics and Astronomy 02 engineering and technology Surfaces and Interfaces General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Focused ion beam Crystallographic defect Fluence Molecular physics Surfaces Coatings and Films Ion Nanolithography 0103 physical sciences Irradiation 0210 nano-technology |
| Zdroj: | Applied Surface Science, 446(SI), 151-159. ELSEVIER SCIENCE BV |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2018.02.015 |
| Popis: | This contribution concentrates on ion-induced bending phenomena which may serve as a versatile tool to manufacture nanostructured devices. In particular bending was studied in free standing Au cantilevers. The preparation and irradiation of the cantilevers were performed using a TESCAN LYRA dual beam system. Cantilevers with thicknesses ranging between 90 and 200 nm were irradiated with 30 keV Ga ions normal to the sample surface up to a maximum fluence of ∼3 × 1020 Ga/m2. The bending of the cantilevers towards the incident beam is discussed in terms of local volume change due to accumulation of radiation-induced vacancies and substitutional Ga atoms in the Ga implantation layer, as well as due to accumulation of interstitial type clusters in the region beyond the Ga penetration range. A model is proposed to explain the observations, based on a set of rate equations for concentrations of point defects, i.e. vacancies, self-interstitials and implanted Ga atoms. The influence of preexisting defects is also discussed. The work shows that an in-depth understanding the ion-beam bending can play a predictive role in a quantitative control in for the micro- and nanofabrication of small-sized products. |
| Databáze: | OpenAIRE |
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