A Tensorial High-Field Electron Mobility Model for Strained Silicon

Autor:	Tibor Grasser, E. Ungersboeck, Hans Kosina, S. Dhar, G. Karlowatz, Siegfried Selberherr
Rok vydání:	2006
Předmět:	Stress (mechanics) Electron mobility Lattice constant Materials science Condensed matter physics Electric field Strained silicon Electron Tensor Electronic band structure
Zdroj:	Scopus-Elsevier
DOI:	10.1109/istdm.2006.246511
Popis:	Application of stress to Si causes a deviation of its lattice constant from the equilibrium value, thereby modifying the electronic band structure. A phenomenological approach to calculate the mobility tensor for electrons in strained Si at high electric fields has been proposed. The model is intended for implementation in drift-diffusion based device simulators
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2ff779169d9bbf5522acace46ab7fd6b https://doi.org/10.1109/istdm.2006.246511 Zobrazit plný text záznamu