Unveiling the Hot Carrier Distribution in Vertical Graphene/h-BN/Au van der Waals Heterostructures for High-Performance Photodetector
| Autor: | Ji Eun Kim, Young Hee Lee, Kunnyun Kim, Won Tae Kang, Ui Yeon Won, Thanh Luan Phan, Woo Jong Yu, Ilmin Lee, Yong Seon Shin, Young Rae Kim |
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| Rok vydání: | 2020 |
| Předmět: |
Imagination
Van der waals heterostructures Chemical substance Materials science Photon Graphene business.industry media_common.quotation_subject Photodetector 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences law.invention law Optoelectronics General Materials Science 0210 nano-technology business Science technology and society Quantum tunnelling media_common |
| Zdroj: | ACS Applied Materials & Interfaces. 12:10772-10780 |
| ISSN: | 1944-8252 1944-8244 |
| DOI: | 10.1021/acsami.9b19904 |
| Popis: | Graphene is one of the most promising materials for photodetectors due to its ability to convert photons into hot carriers within approximately 50 fs and generate long-lived thermalized states with lifetimes longer than 1 ps. In this study, we demonstrate a wide range of vertical photodetectors having a graphene/h-BN/Au heterostructure in which an hexagonal boron nitride (h-BN) insulating layer is inserted between an Au electrode and graphene photoabsorber. The photocarriers effectively tunnel through the small hole barrier (1.93 eV) at the Au/h-BN junction while the dark carriers are highly suppressed by a large electron barrier (2.27 eV) at the graphene/h-BN junction. Thus, an extremely low dark current of ∼10 |
| Databáze: | OpenAIRE |
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