Visible Light-Erasable Oxide FET-Based Nonvolatile Memory Operated with a Deep Trap Interface
| Autor: | Gayoung Kim, Jung Wook Lim, Jiwoon Jeong, Sun Jin Yun, Kwang Hoon Jung, Taeyoon Kim, Jeho Na, Seong Hyun Lee |
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| Rok vydání: | 2018 |
| Předmět: |
Hardware_MEMORYSTRUCTURES
Materials science business.industry Transistor Oxide 02 engineering and technology Dielectric 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences law.invention Non-volatile memory Trap (computing) chemistry.chemical_compound chemistry law Hardware_INTEGRATEDCIRCUITS Optoelectronics General Materials Science 0210 nano-technology business AND gate Quantum tunnelling Visible spectrum |
| Zdroj: | ACS applied materialsinterfaces. 10(31) |
| ISSN: | 1944-8252 |
| Popis: | A new concept of a tunneling oxide-free nonvolatile memory device with a deep trap interface floating gate is proposed. This device demonstrates a high on/off current ratio of 107 and a sizable memory window due to deep traps at the interface between the channel and gate dielectric layers. Interestingly, irradiation with 400 nm light can completely restore the program state to the initial one (performing an erasing process), which is attributed to the visible light-sensitive channel layer. Device reproducibility is enhanced by selectively passivating shallow traps at the interface using in situ H2 plasma treatment. The passivated memory device shows highly reproducible memory operation and on-state current during retention bake tests at 85 °C. One of the most significant advantages of this visible light-erasable oxide field-effect transistor-based nonvolatile memory is its simple structure, which is free from deterioration due to the frequent tunneling processes, as compared to conventional nonvolatile me... |
| Databáze: | OpenAIRE |
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