Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging
| Autor: | Lukas Helfen, A.N. Danilewsky, David Allen, Tilo Baumbach, Petr Mikulík, Patrick J. McNally, J. Wittge, D. Haenschke, Z. Li |
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| Rok vydání: | 2015 |
| Předmět: |
010302 applied physics
Nuclear and High Energy Physics Radiation Materials science Silicon business.industry Synchrotron radiation chemistry.chemical_element 02 engineering and technology Nanoindentation 021001 nanoscience & nanotechnology 01 natural sciences Characterization (materials science) Wafer fabrication Micrometre Crystallography Strain engineering chemistry 0103 physical sciences Optoelectronics Wafer 0210 nano-technology business Instrumentation |
| Zdroj: | Journal of Synchrotron Radiation. 22:1083-1090 |
| ISSN: | 1600-5775 |
| DOI: | 10.1107/s1600577515009650 |
| Popis: | Quantitative characterization of local strain in silicon wafers is critical in view of issues such as wafer handling during manufacturing and strain engineering. In this work, full-field X-ray microdiffraction imaging using synchrotron radiation is employed to investigate the long-range distribution of strain fields in silicon wafers induced by indents under different conditions in order to simulate wafer fabrication damage. The technique provides a detailed quantitative mapping of strain and defect characterization at the micrometer spatial resolution and holds some advantages over conventional methods. |
| Databáze: | OpenAIRE |
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