AlGaInP LEDs using reactive thermally evaporated transparent conducting indium tin oxide (ITO)

Autor:	D.V. Morgan, Holly Thomas, S. W. Bland, Y.H. Aliyu
Rok vydání:	1995
Předmět:	Full width at half maximum Materials science business.industry law Optoelectronics Forward voltage Electrical and Electronic Engineering business Layer (electronics) Sheet resistance Indium tin oxide Light-emitting diode law.invention
Zdroj:	Electronics Letters. 31:1691-1692
ISSN:	1350-911X 0013-5194
DOI:	10.1049/el:19951132
Popis:	Reactive thermally evaporated transparent conducting indium tin oxide (ITO) layers are used as window material and for current spreading layers on AlGaInP light emitting diodes (LEDs). The sheet resistance of the ITO films deposited is of the order of 4.5 /spl Omega///spl square/ with up to 90% transmission in the visible region of the spectrum. In all cases, the devices incorporating the ITO layer gave a marginally greater output (10%) than the standard non-ITO devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2f502481dc752ceb69c33793a67d2889 https://doi.org/10.1049/el:19951132 Zobrazit plný text záznamu