Photoelectric Dual Control Negative Differential Resistance Device Fabricated by Standard CMOS Process
| Autor: | Luhong Mao, Jia Cong, Fan Zhao, Sheng Xie, Dong Yan, Weilian Guo |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
and optical switch
lcsh:Applied optics. Photonics Materials science 02 engineering and technology Integrated circuit Substrate (electronics) 01 natural sciences law.invention law 0103 physical sciences MOSFET 0202 electrical engineering electronic engineering information engineering lcsh:QC350-467 Electrical and Electronic Engineering 010302 applied physics photoelectric devices business.industry CMOS 020208 electrical & electronic engineering Bipolar junction transistor lcsh:TA1501-1820 negative differential resistance (NDR) Photoelectric effect Atomic and Molecular Physics and Optics Dual (category theory) peak-to-valley current ratio (PVCR) Logic gate Optoelectronics business lcsh:Optics. Light |
| Zdroj: | IEEE Photonics Journal, Vol 11, Iss 3, Pp 1-10 (2019) |
| ISSN: | 1943-0647 |
| DOI: | 10.1109/jphot.2019.2910130 |
| Popis: | To prepare a desired negative differential resistance (NDR) device by standard complementary-metal-oxide-semiconductor (CMOS) process, a photoelectric dual control NDR device with a PNP bipolar-junction-transistor (BJT) and an NPN BJT was designed and fabricated by using the Si-base standard 0.18 μm CMOS process without any process modification and a special substrate. In order to reduce the valley current under optical control, a metal mask was added to the NDR device. The results show that the device exhibits good NDR characteristics under either voltage-control or photo-control. Under voltage-control, a low volley current (0.23 pA) and a high peak-to-valley current ratio (1.4 × 1010) are obtained at less than 1 V. Under photo-control, the two parameters obtained at less than 0.5 V, are 37 nA and 4827, respectively. Also, the device displays fine S-type NDR characteristics and nice maintaining response function under photo-control. These superior photoelectric NDR characteristics endow the device with greatly potential application in the photoelectric logic circuits. |
| Databáze: | OpenAIRE |
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