| Autor: |
Hyoung Jong Kim, Su Hyun Lee, Jin Joo Choi, Sang Hoon Kim, Suk Woo Shin, Gil Wong Choi |
| Rok vydání: |
2010 |
| Předmět: |
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| Zdroj: |
2010 IEEE MTT-S International Microwave Symposium. |
| DOI: |
10.1109/mwsym.2010.5516887 |
| Popis: |
In this paper, a frequency tunable, high-efficiency power oscillator using Gallium Nitride High Electron Mobility Transistor (GaN HEMT) for the RF power source applications is designed and fabricated. The steady state oscillation occurs in a delay line feedback loop which length is adjusted to tune oscillation frequency. A harmonic-tuned matching network technique is employed to obtain high conversion efficiency characteristic of the oscillator. The measured output power and conversion efficiency of the fabricated oscillator are 44.63±0.2 dBm and better than 62%, respectively, across the 890–950 MHz band with a drain bias voltage of 40 V. Then a hair-pin resonator is designed and employed into the oscillator in order to improve phase noise characteristics and frequency selectivity. The experimental results of the oscillator with the hair-pin resonator exhibit the output power of 43.55 dBm, corresponding to the conversion efficiency of 61% at 920 MHz. The measured phase noise characteristics are −64 dBc/Hz and −81.24 dBc/Hz at 10 kHz offset without and with the hair-pin resonator, respectively. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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